Differential Pair Circuits

Review

  1. Differential Gain
    1. Single Ended = (RD || ro) * gm / 2
    2. Differential = (RD || ro) * gm
  2. Common Mode Gain
    1. RC / 2R
  3. Common Mode Rejection Ratio

Common Mode Example

  1. Matched pair of MOS VT=1, k=250uA/V2, lambda=0.02-1
  2. Supply current equal 250uA, RD = 100k
  3. Small Signal Parameters
    1. gm = sqrt(2 * 250uA * 125uA) = 0.25mS
    2. ro = 1/ (0.02 * 125uA) = 400k
  4. Equivalent Amp
    1. Input resistance infinite
    2. Differential Gain = gm * (RD || ro) = -20
    3. Single Ended Gain = DiffGain / 2 = -10
    4. Output Resistance = 2 * 80k = 160k
  5. Common Mode Gain
    1. Acm = - gm Rd / (1 + 2 gm R) = - 0.25mS * 100k / (1 + 2 * 0.25mS * 200k) = -0.25
  6. CMRR = -10 / -0.25 = 40

Offset Voltages - Device/Resistor Mismatch

  1. Consider the case of mismatched devices/resistors
  2. Ground inputs
  3. Because of the mismatch, output mismatch occurs - VO
  4. Referenced back to the input
  5. Input offset voltage - VOS = VO / Ad
  6. Consider a resistor mismatch
  7. RC1 = RC + dRC/2, RC2 = RC + dRC/2
  8. VC1 = VCC - I/2 * RC1 = VCC - I/2 * (RC + dRC/2)
  9. VO = VC2 - VC1 = I/2 dRC
  10. Example
    1. Use 1% resistors (10k), 1mA bias current in BJT diff pair
    2. Differential Gain = 10k * 20mS = -200V/V
    3. VO = 0.5mA * 100 = 50mV
    4. VOS = 50mV / 200V/V = 0.25mV
  11. Other mismatches can also be analyzed - see 6.5

Active Load - MOS

  1. PMOS Current Mirror as load - diode connected PMOS on one side
  2. Diode side analysis
    1. NMOS M1 has current gm vd/2 flowing
    2. PMOS M3 has to source that current - gate voltage changes to do so...
  3. Output side analysis
    1. NMOS M2 has current - gm vd/2 flowing
    2. PMOS M4 mirrors PMOS M3 current gm vd/2 flowing
  4. Both output currents must flow into output resistance of amplifier
  5. Rout = rop || ron
  6. Gain = Ad = gm * (rop || ron)
  7. Input resistance is infinite

MOS Active Load Example

  1. Matched pair of NMOS VT=1, k=250uA/V2, lambda=0.02-1
  2. Note - PMOS generally would have to be wider...
  3. Current Mirror Analysis
    1. 8k with NMOS diode connected
    2. 5V = k/2 * 4k * (VGS-VT)2 + VGS
    3. IDS = 0.5mA
    4. R = 1 / (0.02 * 0.5mA) = 100k
  4. Input Resistance = infinite
  5. Output Resistance
    1. Rout = rop || ron = 0.5 / (0.02 * 0.25mA) = 100k
  6. Gain
    1. Ad = gm * (rop || ron) = sqrt(2 * 0.25 * 0.25) * 100k = 35.3V/V
  7. Common Mode Gain
    1. Acm = - gm Rout / (1 + 2 gm R) = Rout / 2R = 100k / 200k = 0.5
  8. CMRR
    1. Ad / Acm = 35.3 / 0.5 = 70

Bipolar Current Mirrors

  1. Diode connected bipolar
  2. Collector and base at same voltage - forward active
  3. Base at 0.7V
  4. Reference current splits into collector and base
  5. Mirror base / emitter circuit into matching bipolar
  6. Remember IC = IS exp( VBE / Vt )
  7. Base emitter voltages identical
  8. Base draws current, however
  9. IC = Iref * ß / (ß + 2)
  10. MOS can mirror infinitely, bipolar draws current which limits maximum

Active Load - Bipolar

  1. PNP Current Mirror as load - diode connected PNP on one side
  2. Diode side analysis
    1. NPN Q1 has current gm vd/2 flowing
    2. PNP Q3 has to source that current - base voltage changes to do so...
  3. Output side analysis
    1. NPN Q2 has current - gm vd/2 flowing
    2. PNP Q4 mirrors PMOS Q3 current gm vd/2 flowing
  4. Both output currents must flow into output resistance of amplifier
  5. Rout = rop || ron
  6. Gain = Ad = gm * (rop || ron)
  7. Input resistance is 2 rpi

Conclusions

Next Time